2009. 7. 2 1/4 semiconductor technical data 2n7002a n channel enhancement mode field effect transistor revision no : 7 interface and switching application. features high density cell design for low r ds(on) . voltage controolled small signal switch. rugged and reliable. high saturation current capablity. maximum rating (ta=25 ) dim millimeters 1. source 2. gate 3. drain sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i d =10 a 60 - - v zero gate voltage drain current i dss v ds =60v, v gs =0v - - 1 a gate-body leakage, forward i gssf v gs =20v, v ds =0v - - 1 a gate-body leakage, reverse i gssr v gs =-20v, v ds =0v - - -1 a characteristic symbol rating unit drain-source voltage v dss 60 v drain-gate voltage (r gs 1 ) v dgr 60 v gate-source voltage v gss 20 v drain current continuous i d 115 ma pulsed i dp 800 drain power dissipation p d 200 mw junction temperature t j 150 storage temperature range t stg -55 150 d g s this transistor is electrostatic sensitive device. please handle with caution. type name marking lot no. wb equivalent circuit
2009. 7. 2 2/4 2n7002a revision no : 7 electrical characteristics (ta=25 ) on characteristics (note 1) characteristic symbol test condition min. typ. max. unit gate threshold voltage v th v ds =v gs , i d =250 a 1 2.1 2.5 v drain-source on resistance r ds(on) v gs =10v, i d =500ma - 1.8 5 v gs =5v, i d =50ma - - 5 drain-source on voltage v ds(on) v gs =10v, i d =500ma - 0.9 2.5 v v gs =5v, i d =50ma - - 0.25 on state drain current i d(on) v gs =10v, v ds 2 v ds(on) 500 - - ma forward transconductance g fs v ds =2v ds(on) , i d =200ma 80 320 - ms dynamic characteristics characteristic symbol test condition min. typ. max. unit input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 20 50 pf reverse transfer capacitance c rss - 4 5 output capacitance c oss - 11 25 switching time turn-on time t on v dd =30v, r l =150 , i d =200ma, v gs =10v, r gen =25 - - 20 ns turn-off time t off - - 20 drain-source diode characteristics and maximum raings characteristic symbol test condition min. typ. max. unit maximum continuous drain-source diode forward current i s - - - 115 ma maximum pulsed drain-source diode forward current i sm - - - 800 ma drain-source diode forward voltage v sd v gs =0v, i s =115ma (note1) - 0.88 1.5 v out output, v 10% 10% 10% 90% 90% 90% 50% 50% f t r t in input, v inverted pulse width d(on) t d(off) t on t off t switching time test circuit gs v gen r v dd r l v out dut d g s in v note 1) pulse test : pulse width 300 , duty cycle 2.0%
2009. 7. 2 3/4 2n7002a revision no : 7 drain-source voltage v (v) drain current i (a) d 0 ds 0 i - v dds 1 common source ta=25 c v =3v gs 2345 0.5 1.0 1.5 2.0 4v 5v 6v 7v 10v 9v 8v gate-source voltage v (v) drain current i (a) d gs i - v dgs 0 0 2 common source ta=-55 c v =10v gs 46810 0.8 0.4 1.2 1.6 2.0 ta=25 c t a= 125 c 0 0.5 0.2 common source v =10v gs 0.4 0.6 0.8 1.0 1.5 1.0 2.0 2.5 3.0 ta=25 c drain source on- resistance r ( ?) ( normalized) drain current i (a) d ds(on) r - i ds(on) d -50 0 -25 common source i =500ma d v =10v gs 02550751 00 125 150 1.0 2.0 3.0 4.0 drain source on- resistance r ( ?) ( normalized) junction temperature t ( c) j ds(on) r - t ds(on) j -50 0.8 -25 common source v =v ds gs i =1ma d 0255075100125150 0.9 0.85 0.95 1.0 1.1 1.05 gate-source threshold voltage v ( normalized) junction temperature t ( c) j th v - t th j body diode forward voltage v (v) reverse drain current i (a) s sd i - v ssd 0.01 0.2 0.03 0.1 0.3 1 3 10 common source v =0 gs 30 ta=-55 c 0.4 0.6 0.8 1.0 1.2 1.4 ta=25 c ta= 125 c
2009. 7. 2 4/4 2n7002a revision no : 7 common source ta=25 c f=1mhz v =0 drain-source voltage v (v) capacitance c (pf) 110 5 330 c - v gs ds 50 ds c rss oss c c iss 1 5 3 10 50 30 100 gate charge q (nc) gate-source voltage v (v) gs g v - q gs g 0 0 0.4 common source v =25v ds i =115ma d 0.8 1.2 1.6 2.0 4 2 6 8 10 i - v ds drain-source voltage v (v) drain current i (a) dds d 1310 100 30 5 single pulse ta=25 c gs v =10v 100 s 1ms 10ms 100 ms 1 s 10s dc ds(on ) r limit 50 2 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1 p - ta d ambient temperature ta ( c) 02040 50 d 0 drain power dissipation p (mw) 60 80 100 120 140 160 100 150 200 250 300 350
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